aliasing effect in Sampling

Effect of under sampling (aliasing effect):-

When a CT band limited signal is sampled at  f_{s} < 2f_{m} , then the successive cycles of the spectrum of the sampled signal overlap with each other as shown below

Some aliasing is produced in the signal this is due to under sampling.

aliasing is the phenomenon in which a high frequency component in the frequency spectrum of the signal takes as a low frequency component in the spectrum of the sampled signal.

Because of aliasing it is not possible to reconstruct x(t) from g(t) by low pass filtering.

The spectral components in the overlapping regions and hence the signal is distorted.

Since any information signal contains a large no.of frequencies so the decision of sampling frequency is always become a problem.

A signal is first passed through LPF  before sampling.

i.e, it is band limited by this LPF which is known as pre-alias filter.

To avoid aliasing

  1. Pre-alias filter must be used to limit the band width of the signal to f_{m}  Hz.
  2. Sampling frequency must be

Pre-alias filter means before sampling is passed through a LPF to make a perfect band limited signal.

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Capacitance of a Co-axial cable

A Co-axial cable is a Transmission line, in which two conductors are placed co-axially and are separated by some dielectric material with dielectric constant (or) permittivity  (\epsilon ).

a conductor is in the form of a cylinder with some radius, let the radius of inner conductor is ‘a’ meters and that of outer conductor be ‘b’ meters.

Now connect this co-axial conductor to a supply of ‘V’ volts , after applying ‘V’ assume positive charges are distributed on M_{2} and negative charges on M_{1} .

Now, a field is induced \overrightarrow{E} between M_{2}  and M_{1} because of flux lines, to find out \overrightarrow{E} at any point P  between these two conductors

location of P is out of the conductor M_{2} an inside the conductor M_{1}.

\therefore \overrightarrow{E}_{at P} = \overrightarrow{E}_{\ due \ to \ inner \ conductor \ M_{1}} .

assume a cylindrical co-ordinate system \rho ,\ \phi , \ z  and axis of cable coincides with z-axis this is similar to a line charge distribution \rho_{L} placed along the z-axis.

\rho _{L}=\frac{Q}{L} .

\therefore \overrightarrow{E}_{at P} = \frac{\rho_ {L}}{2\pi \epsilon _{o}\rho }\overrightarrow{a}_{\rho } .

\therefore V = -\int_{1}^{2}\overrightarrow{E}.\overrightarrow{dl} .

V = -\int_{1}^{2} \frac{\rho_ {L}}{2\pi \epsilon _{o}\rho }\overrightarrow{a}_{\rho }.(d\rho \overrightarrow{a}_{\rho }+d\phi \overrightarrow{a}_{\phi }+dz \overrightarrow{a}_{z }) .

V = -\int_{b}^{a} \frac{\rho_ {L}}{2\pi \epsilon _{o}\rho }\overrightarrow{a}_{\rho }.(d\rho \overrightarrow{a}_{\rho }) .

V = - \frac{\rho_ {L}}{2\pi \epsilon _{o} }(\ln a-\ln b) .

V = \frac{\rho_ {L}}{2\pi \epsilon _{o} }(\ln b-\ln a) .

V = \frac{\rho_ {L}}{2\pi \epsilon _{o} }\ln (\frac{b}{a}) .

V = \frac{Q}{2\pi \epsilon _{o}L }\ln (\frac{b}{a}) \ \because \ \rho _{L} = \frac{Q}{L} .

\therefore C_{co-axial} =\frac{Q}{V} = \frac{2\pi \epsilon_{o}L}{\ln (\frac{b}{a})} .

L- length of the conductors.

b-radius of the outer conductor.

a- radius of the inner conductor.

\epsilon – permittivity of the medium.

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Capacitance of a spherical conductor

choose two spherical conductor systems as shown in the figure with the inner conductor – M_{2}  -radius-a   and outer conductor – M_{1}  -radius-b .

Now induced field is directed from M_{2}   to  M_{1} .  then the potential difference between the two conductors is 

V= -\int_{1}^{2}\overrightarrow{E} .\overrightarrow{dl} .

by assuming a point P between the two conductors such that P is out of inner spherical conductor ( M_{2} ) an inside the outer conductor ( M_{1} ).

\therefore \overrightarrow{E}_{at P} = \frac{Q}{4\pi \epsilon _{o}r^{2} }\overrightarrow{a}_{r} .

\therefore V = -\int_{1}^{2}\overrightarrow{E}.\overrightarrow{dl} .

V = -\int_{1}^{2} \frac{Q}{4\pi \epsilon _{o}r^{2} }\overrightarrow{a}_{r}.(dr \overrightarrow{a}_{r }+d\phi \overrightarrow{a}_{\phi }+d\theta \overrightarrow{a}_{\theta }) .

V = -\int_{r=b}^{a} \frac{Q}{4\pi \epsilon _{o}r^{2} }\overrightarrow{a}_{r}.(dr \overrightarrow{a}_{r }+d\phi \overrightarrow{a}_{\phi }+d\theta \overrightarrow{a}_{\theta }) .

V = - \frac{Q}{4\pi \epsilon _{o} }(\frac{1}{a}-\frac{1}{b}) .

V = \frac{Q}{4\pi \epsilon _{o} }(\frac{1}{b}-\frac{1}{a}) .

\therefore C_{spherical} =\frac{Q}{V} = \frac{4\pi \epsilon _{o}}{(\frac{1}{b}-\frac{1}{a}) } .

b-radius of the outer conductor.

a- radius of the inner conductor.

\epsilon – permittivity of the medium.

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Capacitance (C)- Farads

When two conductors are embedded in a homogeneous dielectric medium as shown in the figure

M_{2} – conductor 2 carries a positive charge (+Q) and M_{1} -conductor 1 carries a negative charge (-Q). Assume the two charges are equal.

\therefore The resultant charge is zero.

we know that charge is carried on the surface as a surface charge density \rho _{s} and \overrightarrow{E}  is normal to the conducting surface.

since M_{2}  carries positive charge the flux is directed from M_{2}  to  M_{1} . flux starts from positive charge and ends at negative charge.

i.e, flux lines leaving one conductor must terminate at the surface of the other conductor.

\therefore  a field is induced between the two conductors  M_{2}  and  M_{1}  and the medium between these two conductors is a dielectric material.

Now, work must be done to carry a positive charge from M_{1} to  M_{2} , that is opposite to the induced field.

V_{21}= -\int_{2}^{1}\overrightarrow{E_{induced}}.\overrightarrow{dl}

V_{21}=V_{1}-V_{2} .

V= -\int_{2}^{1}\overrightarrow{E_{induced}}.\overrightarrow{dl}.

Now, a system as shown in the above figure will have a special physical property called capacitance.

Definition of Capacitance of a conductor:-

The capacitance of a conductor is defined as the physical property of the conductor which is the ability to store Electrical Energy

i.e, C=\frac{Q}{V}  Farads

(or)

Capacitance is the ration of charge of the conductor (either m M_{1} (or)  M_{2} ) to the voltage applied between the two conductors.

Procedure to find Capacitance:-

  • Assume Q  and determine V in terms of Q , or else assume V and determine Q in terms of V.
  • choose a suitable Co-ordinate system.
  • assume the two conducting plates are carrying charges +Q and -Q.
  • Determine  using Gauss’s law (or) by using Coloumb’s law  and find V= - \int \overrightarrow{E}.\overrightarrow{dl} .
  • Finally calculate  C=\frac{Q}{V} .

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Capacitance of Parallel Plate Capacitor

Choose two parallel conducting plates with charge densities separated by a distance ‘d’ meters as shown in the figure.

Assume charges are distributed uniformly on the plates.

Now apply a voltage source ‘V’ to these plates, then all positive charges are accumulated on conductor M_{2} similarly negative charges are accumulated on conductor  M_{1} .

\therefore the charges give rise to a field \overrightarrow{E}  in between them called as induced electric field.

To find out capacitance, choose a co-ordinate system x, y and z as shown in the figure

\therefore V =-\int \overrightarrow{E}.\overrightarrow{dl}.

Noe the potential difference is V=V_{2}-V_{1}.

V_{12}=V_{2}-V_{1}.

\therefore V =-\int_{1}^{2} \overrightarrow{E_{induced}}.\overrightarrow{dl}.

\overrightarrow{E}  is directed from 2 to 1 work has to be done in opposite direction from 1 to 2.

Now \rho _{s}=\frac{Q}{S} . assume two conducting plates has equal surface area S

\therefore  to find out \overrightarrow{E} at any point P in between the ‘2’ plates,  use the concept of infinite sheet of charge distributions with densities  \rho _{s}  and   -\rho _{s} .

E_{\rho _{s}} = \frac{\rho _{s}}{2\epsilon _{o}}(-\overrightarrow{a_{z}}) — from the positive charge distribution.

E_{-\rho _{s}} = \frac{-\rho _{s}}{2\epsilon _{o}}(\overrightarrow{a_{z}}) –with the negative charge distribution.

\therefore  Electric field intensity at P is the sum of electric field intensities due to two infinite charge distributions

\overrightarrow{E_{total}} = \overrightarrow{E_{\rho _{s}}}+\overrightarrow{E_{-\rho _{s}}} .

\overrightarrow{E_{total}} = \frac{\rho _{s}}{2\epsilon _{o}}(-\overrightarrow{a_{z}})+ \frac{-\rho _{s}}{2\epsilon _{o}}(\overrightarrow{a_{z}}) .

\overrightarrow{E_{total} }= \frac{\rho _{s}}{\epsilon _{o}}(-\overrightarrow{a_{z}}) .

Now the potential difference between the two conductors is \therefore V =-\int_{1}^{2} \overrightarrow{E_{induced}}.\overrightarrow{dl} .

\therefore V =-\int_{1}^{2} \frac{\rho _{s}}{\epsilon _{o}}(-\overrightarrow{a_{z}}).\overrightarrow{dl} .

we know that \overrightarrow{dl} = dx\ \overrightarrow{a_{x}}+ dy\ \overrightarrow{a_{y}}+ dz\ \overrightarrow{a_{z}} .

\therefore V =\int_{1}^{2} \frac{\rho _{s}}{\epsilon _{o}}(\overrightarrow{a_{z}}).\ dz \ \overrightarrow{a_{z}} .

V =\int_{0}^{d} \frac{\rho _{s}}{\epsilon _{o}}.\ dz .

V = \frac{\rho _{s}d }{\epsilon _{o}} .

V = \frac{Q\ d }{S\ \epsilon _{o}} \ \because \rho _{s}=\frac{Q}{S} .

\therefore C= \frac{Q}{V}=\frac{S\ \epsilon _{o} }{d} .

If the medium between two parallel plates is air  (or) free space (or) Vaccum  use \epsilon _{o}  or else use \epsilon .

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Infinite Line equivalent circuit

Consider the basic form of Transmission line with some impedance Z_{o} at the Load end.

an infinite line can be approximated by an equivalent finite line with load impedance Z_{o} as shown in the above figure, then the input impedance can be calculated from the voltage and current equations.

now at x= l , V=V_{R} \ and \ I=I_{R} .

V_{R}= V_{s}\cos h\gamma l-I_{s}Z_{o}\sin h\gamma l-----EQN(1).

I_{R}= I_{s}\cos h\gamma l-\frac{V_{s}}{Z_{o}}\sin h\gamma l----EQN(2).

The load voltage is given by the equation V_{R}=I_{R}Z_{o}.

V_{s}\cos h\gamma l-I_{s}Z_{o}\sin h\gamma l = Z_{o}(I_{s}\cos h\gamma l-\frac{V_{s}}{Z_{o}}\sin h\gamma l)

V_{s}Z_{O}\cos h\gamma l-I_{s}Z_{o}^{2}\sin h\gamma l = Z_{o}(I_{s}Z_{o}\cos h\gamma l-V_{S}\sin h\gamma l)

V_{s}(Z_{O}\cos h\gamma l+Z_{R}\sin h\gamma l) = I_{s}Z_{o}(Z_{o}\sin h\gamma l+Z_{R}\cos h\gamma l)

Z_{S}=\frac{V_{S}}{I_{S}}=Z_{o} \frac{(Z_{o}\cos h\gamma l+Z_{o}\sin h\gamma l)}{(Z_{o}\cos h\gamma l+Z_{o}\sin h\gamma l)}

Z_{S} \ (or) \ Z_{in}=Z_{o}.

represents the source (or) input impedance of an infinite Transmission Line.

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E due to infinite line charge distribution

Consider an infinitely long straight line carrying uniform line charge with density \rho _{L} C/m and lies on Z-axis from -\infty to +\infty.

Consider a point P at which Electric field intensity has to be determined which is produced by the line charge distribution.

from the figure let the co-ordinates of P are (0,\rho ,0) ( a point on y-axis) and assume dQ is a small differential charge confirmed to a point  M (0,0,Z) as co-ordinates.

\therefore dQ produces a differential field \overrightarrow{dE} 

\overrightarrow{dE}=\frac{dQ}{4\pi \epsilon _{o}R^{2}}\widehat{a_{r}}

the position vector \overrightarrow{R}=-Z\overrightarrow{a_{z}}+\rho \overrightarrow{a_{\rho }} and the corresponding unit vector \widehat{a_{r}} =\frac{-Z\overrightarrow{a_{z}}+\rho \overrightarrow{a_{\rho }}}{\sqrt{\rho ^{2}+Z^{2}}}

\therefore \overrightarrow{dE} =\frac{dQ}{4\pi \epsilon _{o}}({\frac{-Z\overrightarrow{a_{z}}+\rho \overrightarrow{a_{\rho }}}{(\rho ^{2}+Z^{2})^{\frac{3}{2}}}})

therefore \overrightarrow{dE} =\frac{\rho _{L}dZ}{4\pi \epsilon _{o}}({\frac{-Z\overrightarrow{a_{z}}+\rho \overrightarrow{a_{\rho }}}{(\rho ^{2}+Z^{2})^{\frac{3}{2}}}})

then the Electric field strength \overrightarrow{E} produced by the infinite line charge distribution \rho _{L} is 

\overrightarrow{E} = \int \overrightarrow{dE}

\overrightarrow{E} = \int_{z=-\infty }^{\infty }\frac{\rho _{L}dZ}{4\pi \epsilon _{o}}({\frac{-Z\overrightarrow{a_{z}}+\rho \overrightarrow{a_{\rho }}}{(\rho ^{2}+Z^{2})^{\frac{3}{2}}}})

to solve this integral  let Z= \rho \tan \theta \Rightarrow dZ=\rho \sec ^{2}\theta d\theta

as Z\rightarrow -\infty \Rightarrow \theta \rightarrow \frac{-\pi }{2}

Z\rightarrow \infty \Rightarrow \theta \rightarrow \frac{\pi }{2}

\therefore \overrightarrow{E} = \int_{\theta = \frac{-\pi }{2}}^{ \frac{\pi }{2}} \frac{\rho _{L}}{4\pi\epsilon _{o}}(\frac{-\rho ^{2}\\sec ^{2}\theta \tan \theta d\theta \overrightarrow{a_{z}}+\rho ^{2}\sec ^{2}\theta d\theta \overrightarrow{a_{\rho }}}{(\rho ^{2}+\rho ^{2}\tan ^{2}\theta )^{\frac{3}{2}}})

\overrightarrow{E} = \int_{\theta = \frac{-\pi }{2}}^{ \frac{\pi }{2}} \frac{\rho _{L}}{4\pi\epsilon _{o}}(\frac{-\rho ^{2}\\sec ^{2}\theta \tan \theta d\theta \overrightarrow{a_{z}}+\rho ^{2}\sec ^{2}\theta d\theta \overrightarrow{a_{\rho }}}{\rho ^{3}\sec ^{3}\theta })

\overrightarrow{E} = \frac{\rho _{L}}{4\pi\epsilon _{o}\rho }

\overrightarrow{E}= \frac{\rho _{L}}{4\pi\epsilon _{o}\rho }

\therefore \overrightarrow{E}= \frac{\rho _{L}}{2\pi\epsilon _{o}\rho }\overrightarrow{a_{\rho }} Newtons/Coulomb.

\overrightarrow{E} is a function of \rho   only, there is no \overrightarrow{a_{z}} component and \rho is the perpendicular distance from the point P to line charge distribution \rho _{L}.

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Surface impedance

At high frequencies, the current is almost confined to a very thin sheet at the surface of the conductor which is used in many applications.

The  surface impedance may be defined as the ratio of the tangential component of the electric field \overrightarrow{E_{tan}} at the surface of the conductor to the current density (linear) \overrightarrow{J_{s}} which flows due to this electric field.

given as Z_{s} (or) \eta _{s} = \frac{\overrightarrow{E_{tan}}}{\overrightarrow{J_{s}}}.

\overrightarrow{E_{tan}}   is the Electric field strength parallel to and at the surface of the conductor.

and \overrightarrow{J}  is the total linear current density which flows due to \overrightarrow{E_{tan}}.

The \overrightarrow{J_{s}} represents the total conduction per meter width flowing in this sheet.

Let us consider a conductor of the type plate, is placed at the surface y=0 and the current distribution in the y-direction is given by 

Assume that the depth of penetration (\delta) is very much less compared with the thickness of the conductor.

J_{s}= \int_{0}^{\infty } \overrightarrow{J}.\overrightarrow{dy}

J_{s}= \int_{0}^{\infty } J_{o}e^{-\gamma y}dy

J_{s}= J_{o}(e^{-\gamma y})_{0}^{\infty }

J_{s}= \frac{J_{o}}{\gamma }

from ohm’s law \overrightarrow{J_{o}} = \sigma \overrightarrow{E_{tan}}  

E = \frac{J_{o}}{\sigma } .

then  \eta _{s} = \frac{\gamma }{\sigma } .

Z_{s}  (or)  \eta _{s} = \frac{\gamma }{\sigma } .

we know that \gamma = \sqrt{j\omega \mu (\sigma +j\omega \epsilon )}  

for good conductors  .

then \gamma \approx \sqrt{j\omega \mu \sigma } 

\eta _{s} = \frac{\gamma }{\sigma } = \sqrt{\frac{j\omega \mu }{\sigma }} .

therefore the surface impedance of a plane good conductor which is very much thicker than the skin depth is equal to the characteristic impedance of the conductor.

This impedance is also known s input impedance of the conductor when viewed as transmission line conducting energy into the interior of metal.

when the thickness of the plane conductor is not greater compared to the depth of penetration , reflection of wave occurs at the back surface of the conductor.

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Application of Ampere’s circuit law-infinite sheet of current

consider an infinite sheet in the z=0 plane, which has uniform current density  \overrightarrow{k} = k_{y}\overrightarrow{a_{y}}    A/m .

Let us suppose the current is flowing in the positive y direction.

the sheet of current is assumed to be in rectangular co-ordinate system

\overrightarrow{H} = H_{x}\overrightarrow{a_{x}}+H_{y}\overrightarrow{a_{y}}+H_{z}\overrightarrow{a_{z}}

Let us suppose the conductor is carrying a current I , by right hand thumb rule magnetic field is produced around the conductor is right angles to the direction of I.

In this case of infinite sheet , the current is in the y-direction there is no component of H along the direction of y  and also the z components cancel each other because of opposite direction of the fields produced so only x components of H exists.

\overrightarrow{H} = \left\{\begin{matrix} H_{o}\ \overrightarrow {a_{x}} \ for \ z>0\\ -H_{o}\ \overrightarrow {a_{x}} \ for \ z<0 \end{matrix}\right.

from Ampere’s Circuit law  \oint \overrightarrow{H}. \overrightarrow{dl} = \int \left (\overrightarrow{H}_{1-2}. \overrightarrow{dl}_{1-2} +\overrightarrow{H}_{2-3}. \overrightarrow{dl}_{2-3}+\overrightarrow{H}_{3-4}. \overrightarrow{dl}_{3-4}+\overrightarrow{H}_{4-1}. \overrightarrow{dl}_{4-1} \right ) .

the component \oint \overrightarrow{H}. \overrightarrow{dl} = \int \left (\overrightarrow{H}_{1-2}. \overrightarrow{dl}_{1-2} +\overrightarrow{H}_{2-3}. \overrightarrow{dl}_{2-3}+\overrightarrow{H}_{3-4}. \overrightarrow{dl}_{3-4}+\overrightarrow{H}_{4-1}. \overrightarrow{dl}_{4-1} \right )

\overrightarrow{H}_{1-2}. \overrightarrow{dl}_{1-2}= \overrightarrow{H}_{1-0}. \overrightarrow{dl}_{1-0}+\overrightarrow{H}_{0-2}. \overrightarrow{dl}_{0-2}

\overrightarrow{H}_{1-2}. \overrightarrow{dl}_{1-2}= H_{o} \overrightarrow{a_{x}}.(\frac{a}{2})(-\overrightarrow{a_{z}})- H_{o} \overrightarrow{a_{x}}.(\frac{a}{2})(-\overrightarrow{a_{z}}) .

\overrightarrow{H}_{1-2}. \overrightarrow{dl}_{1-2}=0 .

similarly \overrightarrow{H}_{3-4}. \overrightarrow{dl}_{3-4} =0 .

\therefore \oint \overrightarrow{H}. \overrightarrow{dl} = \int \left (\overrightarrow{H}_{2-3}. \overrightarrow{dl}_{2-3}+\overrightarrow{H}_{4-1}. \overrightarrow{dl}_{4-1} \right) .

\oint \overrightarrow{H}. \overrightarrow{dl} = -(H_{o}\ \overrightarrow{a_{x}}).(b \ -\overrightarrow{a_{x}})+(H_{o}\ \overrightarrow{a_{x}}).(b \ \overrightarrow{a_{x}}) .

\oint \overrightarrow{H}. \overrightarrow{dl} = 2H_{o}\ b .

I= 2H_{o} \ b .

k_{y}\ b = 2H_{o} \ b .

H_{o} =\frac{1}{2} k_{y} .

 as   \overrightarrow{H} = \left\{\begin{matrix} H_{o}\ \overrightarrow {a_{x}} \ for \ z>0 \\ -H_{o}\ \overrightarrow {a_{x}} \ for \ z<0 \end{matrix}\right.

this will be changed to \overrightarrow{H} = \left\{\begin{matrix} \frac{1}{2} k_{y}\ \overrightarrow {a_{x}} \ for \ z>0 \\ -\frac{1}{2} k_{y}\ \overrightarrow {a_{x}} \ for \ z<0 \end{matrix}\right.

In general for a finite sheet of current density  \overrightarrow{k}  A/m  Magnetic field is generalised as     \overrightarrow{H} = \frac{1}{2} (\overrightarrow{k} X \overrightarrow{a_{n}}) .

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Application of Ampere’s circuit law-infinite sheet of current

consider an infinite sheet in the z=0 plane, which has uniform current density  \overrightarrow{k} = k_{y}\overrightarrow{a_{y}}    A/m .

Let us suppose the current is flowing in the positive y direction.

the sheet of current is assumed to be in rectangular co-ordinate system

\overrightarrow{H} = H_{x}\overrightarrow{a_{x}}+H_{y}\overrightarrow{a_{y}}+H_{z}\overrightarrow{a_{z}}

Let us suppose the conductor is carrying a current I , by right hand thumb rule magnetic field is produced around the conductor is right angles to the direction of I.

In this case of infinite sheet , the current is in the y-direction there is no component of H along the direction of y  and also the z components cancel each other because of opposite direction of the fields produced so only x components of H exists.

\overrightarrow{H} = \left\{\begin{matrix} H_{o}\ \overrightarrow {a_{x}} \ for \ z>0\\ -H_{o}\ \overrightarrow {a_{x}} \ for \ z<0 \end{matrix}\right.

from Ampere’s Circuit law  \oint \overrightarrow{H}. \overrightarrow{dl} = \int \left (\overrightarrow{H}_{1-2}. \overrightarrow{dl}_{1-2} +\overrightarrow{H}_{2-3}. \overrightarrow{dl}_{2-3}+\overrightarrow{H}_{3-4}. \overrightarrow{dl}_{3-4}+\overrightarrow{H}_{4-1}. \overrightarrow{dl}_{4-1} \right ) .

the component \oint \overrightarrow{H}. \overrightarrow{dl} = \int \left (\overrightarrow{H}_{1-2}. \overrightarrow{dl}_{1-2} +\overrightarrow{H}_{2-3}. \overrightarrow{dl}_{2-3}+\overrightarrow{H}_{3-4}. \overrightarrow{dl}_{3-4}+\overrightarrow{H}_{4-1}. \overrightarrow{dl}_{4-1} \right )

\overrightarrow{H}_{1-2}. \overrightarrow{dl}_{1-2}= \overrightarrow{H}_{1-0}. \overrightarrow{dl}_{1-0}+\overrightarrow{H}_{0-2}. \overrightarrow{dl}_{0-2}

\overrightarrow{H}_{1-2}. \overrightarrow{dl}_{1-2}= H_{o} \overrightarrow{a_{x}}.(\frac{a}{2})(-\overrightarrow{a_{z}})- H_{o} \overrightarrow{a_{x}}.(\frac{a}{2})(-\overrightarrow{a_{z}}) .

\overrightarrow{H}_{1-2}. \overrightarrow{dl}_{1-2}=0 .

similarly \overrightarrow{H}_{3-4}. \overrightarrow{dl}_{3-4} =0 .

\therefore \oint \overrightarrow{H}. \overrightarrow{dl} = \int \left (\overrightarrow{H}_{2-3}. \overrightarrow{dl}_{2-3}+\overrightarrow{H}_{4-1}. \overrightarrow{dl}_{4-1} \right) .

\oint \overrightarrow{H}. \overrightarrow{dl} = -(H_{o}\ \overrightarrow{a_{x}}).(b \ -\overrightarrow{a_{x}})+(H_{o}\ \overrightarrow{a_{x}}).(b \ \overrightarrow{a_{x}}) .

\oint \overrightarrow{H}. \overrightarrow{dl} = 2H_{o}\ b .

I= 2H_{o} \ b .

k_{y}\ b = 2H_{o} \ b .

H_{o} =\frac{1}{2} k_{y} .

 as   \overrightarrow{H} = \left\{\begin{matrix} H_{o}\ \overrightarrow {a_{x}} \ for \ z>0 \\ -H_{o}\ \overrightarrow {a_{x}} \ for \ z<0 \end{matrix}\right.

this will be changed to \overrightarrow{H} = \left\{\begin{matrix} \frac{1}{2} k_{y}\ \overrightarrow {a_{x}} \ for \ z>0 \\ -\frac{1}{2} k_{y}\ \overrightarrow {a_{x}} \ for \ z<0 \end{matrix}\right.

In general for a finite sheet of current density  \overrightarrow{k}  A/m  Magnetic field is generalised as     \overrightarrow{H} = \frac{1}{2} (\overrightarrow{k} X \overrightarrow{a_{n}}) .

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Ampere’s Circuit law

Ampere’s Circuit law states that the line integral of the tangential component of \overrightarrow{H} around a closed path is the same as the net current (Ienc) enclosed by the path.

 i.e, \oint \overrightarrow{H} .\overrightarrow{dl} = I_{enclosed} .

This is similar to Gauss’s law and can be applied to determine \overrightarrow{H} when the current distribution is symmetrical it’s a special case of Biot-savart’s law.

Proof:-

Consider a circular loop which encloses a current element . Let the current be in upward direction then the field is in anti- clock wise .

The current which is enclosed by the circular loop is of infinite length then  \overrightarrow{H}at  any point A is given by

\overrightarrow{H} = \frac{I_{enc}}{2\pi R} \overrightarrow{a}_{\phi } .

                          \overrightarrow{H}.\overrightarrow{dl} = \frac{I_{enc}}{2\pi R} \overrightarrow{a}_{\phi }.dl \overrightarrow{a}_{\phi } .

                        \overrightarrow{H}.\overrightarrow{dl} = \frac{I_{enc}}{2\pi R}.dl.

                      \overrightarrow{H}.\overrightarrow{dl} = \frac{I_{enc}}{2\pi R}.R d\phi .

                     \overrightarrow{H}.\overrightarrow{dl} = \frac{I_{enc}}{2\pi }d\phi .

                   \oint \overrightarrow{H} . \overrightarrow{dl} = \int_{\phi =0}^{2\pi } \frac{I_{enc}}{2\pi }d\phi .

                  \oint \overrightarrow{H} .\overrightarrow{dl} = I_{enc} .

which is known as the integral form of Ampere’s circuit law.

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Amplitude Shift Keying(ASK)

Amplitude Shift Keying (ASK) (or) On Off Keying (OOK) is the simplest Digital Modulation technique.

In this method, carrier amplitude is switched between two voltages ON and OFF levels depending up on the input binary sequence.

The carrier signal is a continuous wave (or) sinusoidal wave form

S(t)=A \cos 2\pi f_{c}t .

The normalized power is P=\frac{A^{2}}{2}

A=\sqrt{2P_{s}} .

The carrier signal can be expresses in terms of power as S(t)=\sqrt{2P_{s}} \cos 2\pi f_{c}t.

if energy per bit is E_{b} and the bit interval as T_{b} then the carrier signal is S(t)=\sqrt{\frac{2E_{b}}{T_{b}}} \cos 2\pi f_{c}t.

Now according to ASK Binary ‘1’ is represented with carrier voltage and Binary ‘0’ is represented with zero voltage.

\left\{\begin{matrix} S_{ASK}(t)=\sqrt{2P_{s}} \cos 2\pi f_{c}t\rightarrow \ Binary\ '1' \\ =0 \ \rightarrow \ Binary\ '0' \end{matrix}\right.

in terms of Energy and bit duration ASK signal can be written as 

\left\{\begin{matrix} S_{ASK}(t)=\sqrt{\frac{2E_{b}}{T_{b}}} \cos 2\pi f_{c}t\rightarrow \ Binary\ '1' \\ =0 \ \rightarrow \ Binary\ '0' \end{matrix}\right..

ASK Transmitter:-

The figure shows the ASK generator (or) ASK Transmitter

It is a simple product Modulator, which modulates the incoming binary sequence (in the form of a signal) with the carrier signal S(t)

i.e, S_{ASK}(t)=b(t).S(t)

b(t) represents the binary sequence in the form of a signal.

when the  input bit (or) symbol is Binary ‘1’ product Modulator passes the carrier signal and for Binary’0′, A zero output is given which blocks the carrier signal.

\left\{\begin{matrix} S_{ASK}(t)=\sqrt{2P_{s}} \cos 2\pi f_{c}t\rightarrow \ Binary\ '1' \\ =0 \ \rightarrow \ Binary\ '0' \end{matrix}\right..

Coherent ASK Detector:-

The figure shows the Block Diagram of coherent ASK/BASK Detector. The ASK signal S_{ASK}(t) is applied to the correlator ( The Block product Modulator followed up by the Integrator).

S_{ASK}(t) is multiplied by local carrier C(t) this carrier C(t) is phase locked with that of the carrier used in the Transmitter. As this is coherent reception.

The product S_{ASK}(t).C(t) is applied to the Integrator. The Integrator integrates the input over one bit interval T_{b} and the output is given to a threshold device. If the threshold voltage is set to 0 V.

the output of threshold device v(t) (or) v is either ‘1’ (or) ‘0’ based on the following condition.

                                                                     v> 0\rightarrow \ a \ symbol \ '0' \ is \ detected.

v\leq 0\rightarrow \ a \ symbol \ '1' \ is \ detected.

Note:- The input to demodulator is not S_{ASK}(t) always most of the times it is interfered with noise n(t) in the channel.

in coherent detection input to the demodulator is simply S_{ASK}(t) signal where as in Non-coherent detection the input is noisy ASK signal.

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