# Current equation of the diode

The diode under Forward bias is as follows

The current equation related to the voltage V and current I is given by

$I=I_{o}(e^{\frac{V}{\eta&space;v_{T}}}-1)&space;Amperes$

I- Diode current

Io– Reverse saturation current of the diode at room temperature.

V-applied External voltage

$\eta$– constant   = 1  For Ge

= 2 For Si.

$v_{T}=\frac{kT}{q}$ – volt equivalent temperature 26 mV at room temp.

where k-Boltzmann constant = 1.38 X 10-23 J/K.

T-Temperature of Diode in kelvin   oK = o C + 273.

q- charge of electron  = 1.6X10-19 C.

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