Basic Electronics Important Questions-Unit 2 (FAQ)



  1. Draw the h-parameter equivalent model of transistor in CE configuration and define the four h- parameters.
  2. Explain the construction of JFET (either n-channel or p-channel).
  3. Explain the current components of a BJT in detail with a neat sketch.


Short Answer Questions:

  1. Write the differences between JFET and BJT.
  2. What are three possible configurations of BJT?
  3. Define α, β and γ of a BJT write the relationship between them.
  4. What are three possible regions of a transistor (write about cut-off, active and saturation regions).
  5. What is base width modulation?
  6. Define four h-parameters of transistor. And draw general h-parameter model of a BJT.
  7. Define the following
  8. Bandwidth of an amplifier.
  9. Gain or amplification factor.
  10. Compare CE, CB and CC transistors.( in terms of input resistance, o/p resistance, current gain, voltage gain, phase shift and applications).
  11. What are the advantages of FET over BJT?
  12. Why FET is more preferable than BJT?
  13. How FET is known as uni polar device ? how do you compare FET with BJT?
  14. Why FET is called as voltage controlled device?
  15. What are the parameters of FET?
  16. What are the three possible configurations of FET?
  17. Give the relationship between gm , rd and µ.
  18. Draw the equivalent circuit diagram of FET in CS configuration.
  19. Why BJT is called as Current controlled device.
  20. Draw transfer and output characteristics of FET.
  21. Draw the symbols of NPN transistor,n channel FET and SCR.
  22. If the emitter of a transistor is open will there be any collector current.

Long Answer Questions:

  1. What is CB configuration? Draw the input and output characteristics of CB transistor. Explain in detail.
  2. Define α and β of a transistor and derive the relationship between them.
  3. Explain the current components of BJT in detail.
  4. Explain how transistor is working as an amplifier?
  5. Explain the working of CE amplifier with a neat circuit diagram. Derive expression for input resistance, and current gain using h parameter equivalent circuit.
  6. Draw the hybrid equivalent circuit of an NPN BJT in CE configuration. Derive expressions for Av, Ai, Ri,
  7. Calculate the values of Ic and Ib, for a transistor with α=.99,Ico=5µA,Ib=20µA.
  8. Draw a simple inverter circuit and explain its operation.
  9. Draw the h-parameter model of CE transistor and explain how h-parameters are calculated from CE characteristics.
  10. Explain the construction and working of FET (either n-channel or p-channel).
  11. Draw output and transfer characteristics of FET explain the working of /FET through them.
  12. Derive the relationship between gm, rd and µ.
  13. Write the comparisons between FET and BJT.
  14. How FET is working as an amplifier?
  15. Explain the working operation of NPN and PNP transistors.
  16. Explain various operation regions of a transistor in detail.
  17. What is CE configuration? Draw the input and output characteristics of CB transistor. Explain in detail.
  18. What is CC configuration? Draw the input and output characteristics of CB transistor. Explain in detail.
  19. What are the disadvantages of BJT? Why FET is preferred over BJT? Give the applications of FET.
  20. Explain the working of JFET And explain the parameters of JFET.




Prepared by      P.Lakshmi Prasanna





Author: Lakshmi Prasanna Ponnala

Completed M.Tech in Digital Electronics and Communication Systems.

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